Electric-field-controlled reversible order-disorder switching of a metal tip surface

Ludvig de Knoop, Mikael Juhani Kuisma, Joakim Löfgren, Kristof Lodewijks, Mattias Thuvander, Paul Erhart, Alexandre Dmitriev, and Eva Olsson
Phys. Rev. Materials 2, 085006 – Published 22 August 2018
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Abstract

While it is well established that elevated temperatures can induce surface roughening of metal surfaces, the effect of a high electric field on the atomic structure at ambient temperature has not been investigated in detail. Here we show with atomic resolution using in situ transmission electron microscopy how intense electric fields induce reversible switching between perfect crystalline and disordered phases of gold surfaces at room temperature. Ab initio molecular dynamics simulations reveal that the mechanism behind the structural change can be attributed to a vanishing energy cost in forming surface defects in high electric fields. Our results demonstrate how surface processes can be directly controlled at the atomic scale by an externally applied electric field, which promotes an effective decoupling of the topmost surface layers from the underlying bulk. This opens up opportunities for development of active nanodevices in, e.g., nanophotonics and field-effect transistor technology as well as fundamental research in materials characterization and of yet unexplored dynamically controlled low-dimensional phases of matter.

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  • Received 26 October 2017
  • Revised 11 June 2018

DOI:https://doi.org/10.1103/PhysRevMaterials.2.085006

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Ludvig de Knoop1,*, Mikael Juhani Kuisma1,2, Joakim Löfgren1, Kristof Lodewijks1, Mattias Thuvander1, Paul Erhart1,†, Alexandre Dmitriev1,3,4,‡, and Eva Olsson1,§

  • 1Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
  • 2Department of Chemistry, University of Jyväskylä, 40014 Jyväskylä, Finland
  • 3Department of Physics, University of Gothenburg, 412 96 Gothenburg, Sweden
  • 4Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305-4045, USA

  • *ludvig.deknoop@chalmers.se
  • erhart@chalmers.se
  • alexd@physics.gu.se
  • §eva.olsson@chalmers.se

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Issue

Vol. 2, Iss. 8 — August 2018

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